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PD - 9.1097C
IRF7105
HEXFET(R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
N-C HANNE L M O S F E T 1 8
D1 D1
N-Ch
VDSS 25V 0.10 3.5A
P-Ch
-25V 0.25 -2.3A
2
7
3
6
D2 D2
4
5
RDS(on) ID
P -C HANNE L M O S F E T
T op V ie w
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
N-Channel 3.5 2.8 14 2.0 0.016 20 3.0 -55 to + 150 -3.0 P-Channel -2.3 -1.8 -10
Units
A W W/C V V/nS C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Min.
---
Typ.
---
Max.
62.5
Units
C/W
11/4/97
IRF7105
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 25 -25 -- -- -- -- -- -- 1.0 -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.030 -- -0.015 -- 0.083 0.10 0.14 0.16 0.16 0.25 0.30 0.40 -- 3.0 -- -3.0 4.3 -- 3.1 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 9.4 27 10 25 1.7 -- 1.9 -- 3.1 -- 2.8 -- 7.0 20 12 40 9.0 20 13 40 45 90 45 90 25 50 37 50 4.0 -- 6.0 -- 330 -- 290 -- 250 -- 210 -- 61 -- 67 -- Units V V/C Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 1.0A VGS = 4.5V, ID = 0.50A VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.50A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 3.5A VDS = -15V, ID = -3.5A VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V, VDS = 20V, VGS = 0V, TJ = 55C VDS = -20V, VGS = 0V, TJ = 55C VGS = 20V N-Channel ID = 2.3A, VDS = 12.5V, VGS = 10V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
V S
I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS C iss C oss Crss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total GateCharge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
A
nC
P-Channel ID = -2.3A, VDS = -12.5V, VGS = -10V N-Channel VDD = 25V, ID = 1.0A, RG = 6.0, RD = 25
ns P-Channel VDD = -25V, ID = -1.0A, RG = 6.0, RD = 25 nH Between lead , 6mm (0.25in.)from package and center of die contact N-Channel VGS = 0V, VDS = 15V, = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 2.0 -- -- -2.0 A -- -- 14 -- -- -9.2 -- -- 1.2 TJ = 25C, IS = 1.3A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.3A, VGS = 0V -- 36 54 N-Channel ns -- 69 100 TJ = 25C, IF = 1.3A, di/dt = 100A/s -- 41 75 P-Channel nC TJ = 25C, IF = -1.3A, di/dt = 100A/s -- 90 180 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.
N-Channel ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C
P-Channel ISD -2.3A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C
N-Channel
IRF7105
ID , Drain-to-Source Current ( A )
ID , Drain-to-Source Current ( A )
VDS , Drain-to-Source Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
ID , Drain-to-Source Current ( A )
VGS , Gate-to-Source Voltage ( V )
( Normalized)
TJ , Junction Temperature ( C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
IRF7105
ISD , Reverse Drain Current ( A )
N-Channel
ID , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
VDS RD
ID , Drain Current ( A )
VGS RG
D.U.T.
+
V - DD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
TA , Ambient Temperature ( C )
VDS 90%
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Current Regulator Same Type as D.U.T.
10% VGS
td(on) tr t d(off) tf
50K 12V .2F .3F
Fig 10b. Switching Time Waveforms
D.U.T. + V - DS
10V
QGS
QG QGD
VGS
3mA
VG
IG ID
Charge
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
Fig 11b. Basic Gate Charge Waveform
P-Channel
IRF7105
-ID , Drain-to-Source Current ( A )
-ID , Drain-to-Source Current ( A )
-VDS , Drain-to-Source Voltage ( V )
-VDS , Drain-to-Source Voltage ( V )
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
RDS (on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current ( A )
-VGS , Gate-to-Source Voltage ( V )
( Normalized)
TJ , Junction Temperature ( C )
Fig 14. Typical Transfer Characteristics
Fig 15. Normalized On-Resistance Vs. Temperature
-VGS , Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 16. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 17. Typical Gate Charge Vs. Gate-to-Source Voltage
IRF7105
-ISD , Reverse Drain Current ( A )
P-Channel
-ID , Drain Current ( A )
VSD , Source-to-Drain Voltage ( V )
VDS , Drain-to-Source Voltage ( V )
Fig 18. Typical Source-Drain Diode Forward Voltage
Fig 19. Maximum Safe Operating Area
RD VDS VGS RG
-ID , Drain Current ( A )
D.U.T.
+
-10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 21a. Switching Time Test Circuit
VDS
TA , Ambient Temperature ( C )
90%
Fig 20. Maximum Drain Current Vs. Ambient Temperature
Current Regulator Same Type as D.U.T.
10% VGS
td(on) tr t d(off) tf
50K 12V .2F .3F
Fig 21b. Switching Time Waveforms
VDS
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
+
D.U.T.
-10V
QGS VG
QG QGD
Fig 22b. Basic Gate Charge Waveform
-
VDD
N & P-Channel
100
IRF7105
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7105
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS*
**
* dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ -
VDD
*
* Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 24. For N and P Channel HEXFETS
IRF7105
Package Outline
SO-8 Outline Dimensions are shown in millimeters (inches)
D -B-
DIM
5
INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
2
3
4
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
0.72 (.028 ) 8X
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004) 6 C 8X
-CB 8X 0.25 (.010) NOTES: A1 M CASBS
L 8X
RECOMMENDED FOOTPRINT
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 )
1.78 (.070) 8X
Part Marking Information
SO-8
E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S )
312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101
TOP
PART NUMBER
BO TTO M
IRF7105
Tape & Reel Information
SO-8 Dimensions are shown in millimeters (inches)
1.85 (.07 2) 4.10 (.161) 1.65 (.06 5) 3.90 (.154) 1.60 (.062) 1.50 (.059) 0 .35 (.013 ) 0 .25 (.010 )
T E R M IN A T IO N N U M BER 1
2 .05 (.080 ) 1 .95 (.077 )
1
5.55 (.218) 5.45 (.215)
5 .30 (.208) 5 .10 (.201)
12.30 (.4 84) 11.70 (.4 61)
F E E D D IR E C T IO N
8.10 (.3 18) 7.90 (.3 11) 6 .50 (.255) 6 .30 (.248)
2.6 0 (.102) 1.5 0 (.059) 2.20 (.0 86) 2.00 (.0 79)
13 .20 (.519) 12 .80 (.504)
15.40 (.607) 11.90 (.469) 2
330.00 (13.00 0) M AX.
50.0 0 (1.969) M IN .
N O TES: 1 C O N F O R M S T O E IA -481-1 2 IN C LU D E S F LA N G E D IST O R T IO N @ O U T E R E D G E 3 D IM E N S IO N S M E A S U R E D @ H U B 4 C O N T R O L LIN G D IM E N S IO N : M E T R IC
18.40 (.7 24) M AX 3 14.40 (.5 66) 12.40 (.4 48) 3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97

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